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IPW60R120P7XKSA1

IPW60R120P7XKSA1
Mfr. #:
IPW60R120P7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW60R120P7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
26 A
Rds On - Resistenza Drain-Source:
100 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
36 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
95 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
CoolMOS P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
6 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
81 ns
Tempo di ritardo di accensione tipico:
21 ns
Parte # Alias:
IPW60R120P7 SP001658382
Unità di peso:
0.211644 oz
Tags
IPW60R120, IPW60R12, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - TO-247-3
***et
Trans MOSFET N-CH 650V 26A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 600V 26A TO247-3
***ronik
N-CH 650V 78A 120mOhm TO247-3
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 26A, 95W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 26A, 95W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:95W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 26A, 95W, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:26A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:95W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Parte # Mfg. Descrizione Azione Prezzo
IPW60R120P7XKSA1
DISTI # V36:1790_18196279		Infineon Technologies AGIPW60R120P7XKSA10
    IPW60R120P7XKSA1
    DISTI # IPW60R120P7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 26A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 2640:$2.0413
    • 720:$2.5415
    • 240:$2.9855
    • 25:$3.4448
    • 10:$3.6440
    • 1:$4.0600
    IPW60R120P7XKSA1
    DISTI # IPW60R120P7XKSA1    		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R120P7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$1.7900
    • 2400:$1.7900
    • 960:$1.8900
    • 480:$1.9900
    • 240:$2.0900
    IPW60R120P7XKSA1
    DISTI # 93AC7141    		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 95W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes100
    • 500:$2.4400
    • 250:$2.7200
    • 100:$2.8700
    • 50:$3.0200
    • 25:$3.1600
    • 10:$3.3100
    • 1:$3.9000
    IPW60R120P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - TO-247-3
    RoHS: Not Compliant    		240Tube
    • 240:$1.8900
    IPW60R120P7XKSA1
    DISTI # 726-IPW60R120P7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		474
    • 1:$3.8600
    • 10:$3.2800
    • 100:$2.8400
    • 250:$2.6900
    • 500:$2.4200
    • 1000:$2.0400
    • 2500:$1.9400
    IPW60R120P7XKSA1
    DISTI # 2986489    		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 95W, TO-247
    RoHS: Compliant    		320
    • 500:$2.9200
    • 250:$3.2200
    • 100:$3.3900
    • 10:$3.8700
    • 1:$4.9500
    IPW60R120P7XKSA1
    DISTI # 2986489    		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 95W, TO-247322
    • 100:£2.6200
    • 10:£3.0100
    • 1:£3.9800
    IPW60R120P7XKSA1
    DISTI # XSFP00000111482    		Infineon Technologies AG 
    RoHS: Compliant    		480 in Stock0 on Order
    • 480:$3.4400
    • 240:$3.7800
    Immagine Parte # Descrizione
    UCC27712DR

    Mfr.#: UCC27712DR

    OMO.#: OMO-UCC27712DR

    		 Gate Drivers 700V GATE DRIVER
    VS-MUR1520-M3

    Mfr.#: VS-MUR1520-M3

    OMO.#: OMO-VS-MUR1520-M3

    		 Rectifiers 200V 15A TO-220 Fred Pt
    IPD60R170CFD7ATMA1

    Mfr.#: IPD60R170CFD7ATMA1

    OMO.#: OMO-IPD60R170CFD7ATMA1

    		 MOSFET HIGH POWER_NEW
    IPW60R125CFD7XKSA1

    Mfr.#: IPW60R125CFD7XKSA1

    OMO.#: OMO-IPW60R125CFD7XKSA1

    		 MOSFET HIGH POWER_NEW
    FCP125N65S3R0

    Mfr.#: FCP125N65S3R0

    OMO.#: OMO-FCP125N65S3R0

    		 MOSFET SUPERFET3 650V 24A 125 mOhm
    S1812R-333K

    Mfr.#: S1812R-333K

    OMO.#: OMO-S1812R-333K

    		 Fixed Inductors 33uH 10%
    VS-MUR1520-M3

    Mfr.#: VS-MUR1520-M3

    OMO.#: OMO-VS-MUR1520-M3-VISHAY

    		 DIODE FRED 200V 15A TO220AB
    IPW60R125CFD7XKSA1

    Mfr.#: IPW60R125CFD7XKSA1

    OMO.#: OMO-IPW60R125CFD7XKSA1-INFINEON-TECHNOLOGIES

    		 HIGH POWER_NEW
    S1812R-333K

    Mfr.#: S1812R-333K

    OMO.#: OMO-S1812R-333K-API-DELEVAN

    		 Fixed Inductors 33uH 10%
    UCC27712DR

    Mfr.#: UCC27712DR

    OMO.#: OMO-UCC27712DR-TEXAS-INSTRUMENTS

    		 700V GATE DRIVER
    Disponibilità
    Azione:
    470
    Su ordine:
    2453
    Inserisci la quantità:
    Il prezzo attuale di IPW60R120P7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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