SISH101DN-T1-GE3

SISH101DN-T1-GE3
Mfr. #:
SISH101DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SISH101DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SISH101DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-1212-8SH-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
- 35 A
Rds On - Resistenza Drain-Source:
7.2 mOhms
Vgs th - Tensione di soglia gate-source:
- 1.2 V
Vgs - Tensione Gate-Source:
25 V
Qg - Carica cancello:
102 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
52 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET; PowerPAK
Confezione:
Bobina
Tipo di transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
44 S
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
38 ns
Tempo di ritardo di accensione tipico:
12 ns
Tags
SISH10, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SISH101DN-T1-GE3
DISTI # V72:2272_22989541
Vishay IntertechnologiesSISH101DN-T1-GE36000
  • 75000:$0.2594
  • 30000:$0.2632
  • 15000:$0.2670
  • 6000:$0.2708
  • 3000:$0.2746
  • 1000:$0.2784
  • 500:$0.2945
  • 250:$0.3274
  • 100:$0.3638
  • 50:$0.4042
  • 25:$0.4491
  • 10:$0.6712
  • 1:$0.7472
SISH101DN-T1-GE3
DISTI # SISH101DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6050In Stock
  • 1000:$0.3374
  • 500:$0.4218
  • 100:$0.5336
  • 10:$0.6960
  • 1:$0.7900
SISH101DN-T1-GE3
DISTI # SISH101DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6050In Stock
  • 1000:$0.3374
  • 500:$0.4218
  • 100:$0.5336
  • 10:$0.6960
  • 1:$0.7900
SISH101DN-T1-GE3
DISTI # SISH101DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 30000:$0.2594
  • 15000:$0.2662
  • 6000:$0.2764
  • 3000:$0.2969
SISH101DN-T1-GE3
DISTI # 33159146
Vishay IntertechnologiesSISH101DN-T1-GE36000
  • 30000:$0.2632
  • 15000:$0.2670
  • 6000:$0.2708
  • 3000:$0.2746
  • 1000:$0.2784
  • 500:$0.2945
  • 250:$0.3274
  • 100:$0.3638
  • 50:$0.4042
  • 26:$0.4491
SISH101DN-T1-GE3
DISTI # SISH101DN-T1-GE3
Vishay IntertechnologiesTransistor MOSFET P-CH 30V 35A 8-Pin PowerPAK 1212 T/R (Alt: SISH101DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2679
  • 18000:€0.2879
  • 12000:€0.3109
  • 6000:€0.3619
  • 3000:€0.5309
SISH101DN-T1-GE3
DISTI # SISH101DN-T1-GE3
Vishay IntertechnologiesTransistor MOSFET P-CH 30V 35A 8-Pin PowerPAK 1212 T/R (Alt: SISH101DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    SISH101DN-T1-GE3
    DISTI # 99AC2828
    Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes55
    • 1000:$0.3150
    • 500:$0.3940
    • 250:$0.4350
    • 100:$0.4770
    • 50:$0.5280
    • 25:$0.5780
    • 10:$0.6290
    • 1:$0.7780
    SISH101DN-T1-GE3
    DISTI # 78-SISH101DN-T1-GE3
    Vishay IntertechnologiesMOSFET -30V Vds,+/-25V Vgs PowerPAK 1212-8SH
    RoHS: Compliant
    6037
    • 1:$0.7700
    • 10:$0.6230
    • 100:$0.4720
    • 500:$0.3900
    • 1000:$0.3120
    • 3000:$0.2830
    • 6000:$0.2640
    • 9000:$0.2540
    • 24000:$0.2440
    SISH101DN-T1-GE3
    DISTI # 3019124
    Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W
    RoHS: Compliant
    55
    • 1000:$0.3620
    • 500:$0.4580
    • 250:$0.5100
    • 100:$0.5630
    • 25:$0.7570
    • 5:$0.8290
    SISH101DN-T1-GE3
    DISTI # 3019124
    Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W50
    • 500:£0.2830
    • 250:£0.3130
    • 100:£0.3420
    • 10:£0.4980
    • 1:£0.6380
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    NCP51530BDR2G

    Mfr.#: NCP51530BDR2G

    OMO.#: OMO-NCP51530BDR2G

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    Mfr.#: STUSB4710AQTR

    OMO.#: OMO-STUSB4710AQTR

    USB Interface IC CONDITIONING & INTERFACES
    FDMS86200DC

    Mfr.#: FDMS86200DC

    OMO.#: OMO-FDMS86200DC

    MOSFET 150V/20V N Channel PowerTrench MOSFET
    FODM8801AR2V

    Mfr.#: FODM8801AR2V

    OMO.#: OMO-FODM8801AR2V

    Transistor Output Optocouplers 2.03 x 2.5 x 4.4mm 4 Lead Surface Mount
    UCC28780DR

    Mfr.#: UCC28780DR

    OMO.#: OMO-UCC28780DR

    Switching Controllers ACTIVE CLAMP FLYBACK
    NCP43080DDR2G

    Mfr.#: NCP43080DDR2G

    OMO.#: OMO-NCP43080DDR2G

    Switching Controllers SECONDARY SIDE SYNCHRONOU
    ATL431LIAQDBZR

    Mfr.#: ATL431LIAQDBZR

    OMO.#: OMO-ATL431LIAQDBZR-TEXAS-INSTRUMENTS

    V-Ref Adjustable 2.5V to 36V 15mA 3-Pin SOT-23 T/R
    CC0805KKX7R9BB105

    Mfr.#: CC0805KKX7R9BB105

    OMO.#: OMO-CC0805KKX7R9BB105-YAGEO

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 50V X7R 10%
    FODM8801AR2V

    Mfr.#: FODM8801AR2V

    OMO.#: OMO-FODM8801AR2V-ON-SEMICONDUCTOR

    Transistor Output Optocouplers 2.03 x 2.5 x 4.4mm 4 Lead Surface Mount
    FDMS86200DC

    Mfr.#: FDMS86200DC

    OMO.#: OMO-FDMS86200DC-ON-SEMICONDUCTOR

    MOSFET N-CH 150V 9.3A POWER 56
    Disponibilità
    Azione:
    Available
    Su ordine:
    1989
    Inserisci la quantità:
    Il prezzo attuale di SISH101DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,77 USD
    0,77 USD
    10
    0,62 USD
    6,23 USD
    100
    0,47 USD
    47,20 USD
    500
    0,39 USD
    195,00 USD
    1000
    0,31 USD
    312,00 USD
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