SIHU7N60E-GE3

Mfr. #:: SIHU7N60E-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 600V Vds 30V Vgs IPAK (TO-251)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIHU7N60E-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHU7N60E-GE3 Datasheet SIHU7N60E-GE3 Datasheet (P4-P6)SIHU7N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:: SIHU7N60E-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: Foro passante

Pacchetto/custodia:: TO-251-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 609 V

Id - Corrente di scarico continua:: 7 A

Rds On - Resistenza Drain-Source:: 600 mOhms

Vgs th - Tensione di soglia gate-source:: 4 V

Vgs - Tensione Gate-Source:: 30 V

Qg - Carica cancello:: 20 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 78 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Tubo

Serie:: E

Marca:: Vishay / Siliconix

Tempo di caduta:: 14 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 13 ns

Quantità confezione di fabbrica:: 75

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 24 ns

Tempo di ritardo di accensione tipico:: 13 ns

Unità di peso:: 0.011640 oz

Tags: SIHU7, SIHU, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHU7N60E-GE3 Valutazioni e recensioni

R***m

item received thanks to the seller

2019-03-18

A***V

Everything works

2019-04-06

SIHU7N60E-GE3 Descrizione

***ical: Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK

***et Europe: Trans MOSFET N-CH 600V 7A 3-Pin IPAK

***ment14 APAC: MOSFET, N CH, 600V, 7A, TO-251-3

***i-Key: MOSFET N-CH 600V 7A TO-251

***ark: N-CHANNEL 600V

***nell: MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHU7N60E-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHU7N60E-GE3 DISTI # SIHU7N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 7A TO-251 RoHS: Compliant Min Qty: 3000 Container: Tube	Temporarily Out of Stock	3000:$0.8363
SIHU7N60E-GE3 DISTI # SIHU7N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin IPAK (Alt: SIHU7N60E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.6979 500:€0.7069 100:€0.7189 50:€0.7299 25:€0.8259 10:€1.0179 1:€1.4189
SIHU7N60E-GE3 DISTI # SIHU7N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin IPAK - Tape and Reel (Alt: SIHU7N60E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.7559 18000:$0.7769 12000:$0.7989 6000:$0.8329 3000:$0.8579
SIHU7N60E-GE3 DISTI # 68W7074	Vishay Intertechnologies	MOSFET, N CH, 600V, 7A, TO-251-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	12000:$0.7320 6000:$0.8260 3000:$0.8680 1:$0.8740
SIHU7N60E-GE3 DISTI # 68W7073	Vishay Intertechnologies	MOSFET, N CHANNEL, 600V, 7A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1000:$1.0900 500:$1.2800 250:$1.4600 100:$1.6400 50:$1.8200 25:$1.9700 1:$2.0600
SIHU7N60E-GE3 DISTI # 63W4120	Vishay Intertechnologies	Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes	1488	2500:$0.8070 1000:$0.8960 500:$0.9990 100:$1.1000 50:$1.2200 25:$1.3200 10:$1.4200 1:$1.7100
SIHU7N60E-GE3 DISTI # 78-SIHU7N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	0	3000:$0.7970 6000:$0.7680
SIHU7N60E-E3 DISTI # 78-SIHU7N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	0	3000:$0.9000 6000:$0.8660 9000:$0.8330
SIHU7N60E-GE3	Vishay Intertechnologies		2100
SIHU7N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	Americas -
SIHU7N60E-GE3 DISTI # 2283639	Vishay Intertechnologies	MOSFET, N-CH, 600V, 7A, IPAK RoHS: Compliant	1488	100:$1.8200 10:$2.3400 1:$2.8200
SIHU7N60E-GE3 DISTI # 2283639	Vishay Intertechnologies	MOSFET, N-CH, 600V, 7A, IPAK	1670	500:£0.8830 250:£0.9540 100:£1.0200 25:£1.3100 5:£1.4300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SIHU7N60E-GE3 OMO.#: OMO-SIHU7N60E-GE3	MOSFET 600V Vds 30V Vgs IPAK (TO-251)
	Mfr.#: SIHU7N60E-E3 OMO.#: OMO-SIHU7N60E-E3	MOSFET 600V Vds 30V Vgs IPAK (TO-251)
	Mfr.#: SIHU7N60E-E3 OMO.#: OMO-SIHU7N60E-E3-VISHAY	RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHU7N60E OMO.#: OMO-SIHU7N60E-1190	Nuovo e originale
	Mfr.#: SIHU7N60E-GE3 OMO.#: OMO-SIHU7N60E-GE3-VISHAY	MOSFET N-CH 600V 7A TO-251

Disponibilità

Azione:: Available
Su ordine:: 5500
Inserisci la quantità:

Il prezzo attuale di SIHU7N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

3000: ~~0,80 USD~~; ~~2 391,00 USD~~

6000: ~~0,77 USD~~; ~~4 608,00 USD~~

12000: ~~0,74 USD~~; ~~8 856,00 USD~~

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SIHU7N60E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

R***m

A***V

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes