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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SQJ402EP-T1-GE3 DISTI # V72:2272_14140680 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS | 541 |
|
| SQJ402EP-T1-GE3 DISTI # V36:1790_14140680 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS | 0 |
|
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V POWERPAK SO8L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 14344In Stock |
|
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V POWERPAK SO8L RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 14344In Stock |
|
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V POWERPAK SO8L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 12000In Stock |
|
| SQJ402EP-T1-GE3 DISTI # 31274710 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS | 541 |
|
| SQJ402EP-T1-GE3 DISTI # 30604994 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS | 250 |
|
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1-GE3 | Vishay Intertechnologies | N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 100 V, 32 A, 11 mΩ - Tape and Reel (Alt: SQJ402EP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 | |
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3 | Vishay Intertechnologies | N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 100 V, 32 A, 11 mΩ (Alt: SQJ402EP-T1_GE3) RoHS: Compliant Min Qty: 3000 | Asia - 0 | |
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3 | Vishay Intertechnologies | N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 100 V, 32 A, 11 mΩ - Tape and Reel (Alt: SQJ402EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1-GE3 | Vishay Intertechnologies | N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 100 V, 32 A, 11 mΩ (Alt: SQJ402EP-T1-GE3) RoHS: Compliant Min Qty: 3000 | Europe - 0 |
|
| SQJ402EP-T1_GE3 DISTI # 76Y1528 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOSFET | 0 |
|
| SQJ402EP-T1_GE3 DISTI # 78-SQJ402EP-T1_GE3 | Vishay Intertechnologies | MOSFET 100V 32A 27watt AEC-Q101 Qualified RoHS: Compliant | 5446 |
|
| SQJ402EP-T1-GE3 DISTI # 78-SQJ402EP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 RoHS: Compliant | 0 | |
| SQJ402EPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor RoHS: Compliant | 3000 | |
| SQJ402EP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 RoHS: Compliant | Americas - | |
| SQJ402EP-T1_GE3 DISTI # C1S806001177590 | Vishay Intertechnologies | MOSFETs | 250 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SQJ420EP-T1_GE3 OMO.#: OMO-SQJ420EP-T1-GE3 |
MOSFET 40V Vds -/+20V Vgs AEC-Q101 Qualified |
|
Mfr.#: SQJ454EP-T1_GE3 OMO.#: OMO-SQJ454EP-T1-GE3 |
MOSFET 200V Vds PowerPAK AEC-Q101 Qualified |
|
Mfr.#: SQJ422EP-T1_GE3 OMO.#: OMO-SQJ422EP-T1-GE3 |
MOSFET -40V 75A 83W AEC-Q101 Qualified |
|
|
Mfr.#: SQJ412EP-T1_GE3 OMO.#: OMO-SQJ412EP-T1-GE3-C09 |
MOSFET 40V 32A 83W AEC-Q101 Qualified |
|
|
Mfr.#: SQJ433EP-T1_GE3 OMO.#: OMO-SQJ433EP-T1-GE3 |
MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified |
|
Mfr.#: SQJ474EP-T1_GE3 OMO.#: OMO-SQJ474EP-T1-GE3-VISHAY |
MOSFET N-CH 100V 26A POWERPAKSO |
|
Mfr.#: SQJ401EPT1GE3 OMO.#: OMO-SQJ401EPT1GE3-1190 |
Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SQJ403EEP OMO.#: OMO-SQJ403EEP-1190 |
Nuovo e originale |
|
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Mfr.#: SQJ459EP OMO.#: OMO-SQJ459EP-1190 |
Nuovo e originale |
|
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Mfr.#: SQJ479EP-T1-GE3 OMO.#: OMO-SQJ479EP-T1-GE3-1190 |
Nuovo e originale |