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ZXMS6004DN8-13

ZXMS6004DN8-13
Mfr. #:
ZXMS6004DN8-13
Produttore:
Diodes Incorporated
Descrizione:
MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZXMS6004DN8-13 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMS6004DN8-13 DatasheetZXMS6004DN8-13 Datasheet (P4-P6)ZXMS6004DN8-13 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
ZXMS6004DN8-13 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Diodi incorporati
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
1.2 A
Rds On - Resistenza Drain-Source:
600 mOhms, 600 mOhms
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1.56 W
Configurazione:
Dual
Modalità canale:
Aumento
Nome depositato:
IntelliFET
Confezione:
Bobina
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Prodotto:
MOSFET
Serie:
ZXMS6004
Tipo di transistor:
2 N-Channel
Tipo:
Intellifet
Larghezza:
3.9 mm
Marca:
Diodi incorporati
Tempo di caduta:
15 us
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 us
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
45 us
Tempo di ritardo di accensione tipico:
5 us
Unità di peso:
0.002610 oz
Tags
ZXMS6004DN, ZXMS6004D, ZXMS6004, ZXMS6, ZXMS, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 60 V 500 mOhm 1.56 W Silicon Mosfet - SOIC-8
***et Europe
Trans MOSFET Array Dual N-CH 60V 1.2A 8-Pin SOIC T/R
***des Inc SCT
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET, 1.2A, 1.56W
***ical
Current Limit SW 2-IN 2-OUT 0V to 5.5V 1.2A 8-Pin SO T/R
***ronik
2xLSS 500mOhm 30V 10A SO-8 SMD
***i-Key
IC PWR DRIVER N-CHANNEL 1:1 8SO
***ark
Mosfet, Dual N-Ch, 60V, 1.2A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.35Ohm; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes
IntelliFET Self-Protected MOSFETs
Diodes Inc. IntelliFET Self-Protected MOSFETs integrate a power MOSFET with a complete array of protection circuits. These protections guard against ESD, over-current, over-voltage and over-temperature conditions. Intelligent MOSFETs sense potentially catastrophic conditions and protects themselves and the connected loads. These protection functions improve overall system reliability. Additional features like status flags provide diagnostic capabilities that aid isolation and rectification faults within a vehicle.
Parte # Mfg. Descrizione Azione Prezzo
ZXMS6004DN8-13
DISTI # ZXMS6004DN8-13DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 1.3A SO8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8835In Stock
  • 1000:$0.4665
  • 500:$0.5713
  • 100:$0.7545
  • 10:$0.9640
  • 1:$1.1000
ZXMS6004DN8-13
DISTI # ZXMS6004DN8-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 1.3A SO8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8835In Stock
  • 1000:$0.4665
  • 500:$0.5713
  • 100:$0.7545
  • 10:$0.9640
  • 1:$1.1000
ZXMS6004DN8-13
DISTI # ZXMS6004DN8-13DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 1.3A SO8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.4148
ZXMS6004DN8-13
DISTI # ZXMS6004DN8-13		Diodes IncorporatedTrans MOSFET N-CH 60V 1.2A 8-Pin SOIC T/R (Alt: ZXMS6004DN8-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3799
  • 5000:€0.3609
  • 10000:€0.3559
  • 15000:€0.3499
  • 25000:€0.3339
ZXMS6004DN8-13
DISTI # ZXMS6004DN8-13		Diodes IncorporatedTrans MOSFET N-CH 60V 1.2A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMS6004DN8-13)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3479
  • 5000:$0.3309
  • 10000:$0.3159
  • 15000:$0.3009
  • 25000:$0.2949
ZXMS6004DN8-13
DISTI # 621-ZXMS6004DN8-13		Diodes IncorporatedMOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ
RoHS: Compliant		30448
  • 1:$0.8200
  • 10:$0.6820
  • 100:$0.4400
  • 1000:$0.3520
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150060GS75000

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OMO.#: OMO-150060GS75000

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Mfr.#: BNO055

OMO.#: OMO-BNO055

 IMUs - Inertial Measurement Units Absolute Orientation 9-Axis Sensor
REF3333AIDBZR

Mfr.#: REF3333AIDBZR

OMO.#: OMO-REF3333AIDBZR

 Voltage References 30ppm/C Drift 3.9uA Vltg Ref
REF3333AIDBZR

Mfr.#: REF3333AIDBZR

OMO.#: OMO-REF3333AIDBZR-TEXAS-INSTRUMENTS

 Voltage References 30ppm/C Drift 3.9uA Vltg Ref
Disponibilità
Azione:
31
Su ordine:
2014
Inserisci la quantità:
Il prezzo attuale di ZXMS6004DN8-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,82 USD
0,82 USD
10
0,68 USD
6,82 USD
100
0,44 USD
44,00 USD
1000
0,35 USD
352,00 USD
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