SCTH90N65G2V-7

SCTH90N65G2V-7
Mfr. #:
SCTH90N65G2V-7
Produttore:
STMicroelectronics
Descrizione:
SILICON CARBIDE POWER MOSFET 650
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SCTH90N65G2V-7 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SCTH90N65G2V-7 maggiori informazioni SCTH90N65G2V-7 Product Details
Attributo del prodotto
Valore attributo
Tags
SCTH, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
Parte # Mfg. Descrizione Azione Prezzo
SCTH90N65G2V-7
DISTI # V36:1790_18695152
STMicroelectronicsSCTH90N65G2V-70
  • 1000000:$35.1100
  • 500000:$35.1200
  • 100000:$39.3700
  • 10000:$50.6500
  • 1000:$52.8000
SCTH90N65G2V-7
DISTI # 497-18352-1-ND
STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SCTH90N65G2V-7
    DISTI # 497-18352-6-ND
    STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SCTH90N65G2V-7
      DISTI # 497-18352-2-ND
      STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
      RoHS: Compliant
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
        SCTH90N65G2V-7
        DISTI # SCTH90N65G2V-7
        STMicroelectronicsMOSFET 90A, 650V, 22mO (Alt: SCTH90N65G2V-7)
        RoHS: Compliant
        Min Qty: 1000
        Europe - 0
          SCTH90N65G2V-7
          DISTI # SCTH90N65G2V-7
          STMicroelectronicsMOSFET 90A, 650V, 22mO - Tape and Reel (Alt: SCTH90N65G2V-7)
          RoHS: Not Compliant
          Min Qty: 1000
          Container: Reel
          Americas - 0
          • 10000:$37.5900
          • 6000:$38.3900
          • 4000:$40.1900
          • 2000:$42.0900
          • 1000:$44.1900
          SCTH90N65G2V-7
          DISTI # 02AH6929
          STMicroelectronicsPTD WBG & POWER RF0
          • 1:$36.8800
          SCTH90N65G2V-7
          DISTI # 511-SCTH90N65G2V-7
          STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          RoHS: Compliant
          0
          • 1:$52.8000
          • 5:$51.6200
          • 10:$49.2600
          • 25:$47.2000
          • 100:$42.7700
          • 250:$41.2900
          • 500:$36.4900
          Immagine Parte # Descrizione
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7

          MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7-STMICROELECTRONICS

          SILICON CARBIDE POWER MOSFET 650
          Disponibilità
          Azione:
          Available
          Su ordine:
          5000
          Inserisci la quantità:
          Il prezzo attuale di SCTH90N65G2V-7 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          52,66 USD
          52,66 USD
          10
          50,03 USD
          500,32 USD
          100
          47,40 USD
          4 739,85 USD
          500
          44,77 USD
          22 382,65 USD
          1000
          42,13 USD
          42 132,00 USD
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