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SI3442BDV-T1-GE3

SI3442BDV-T1-GE3
Mfr. #:
SI3442BDV-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI3442BDV-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3442BDV-T1-GE3 DatasheetSI3442BDV-T1-GE3 Datasheet (P4-P6)SI3442BDV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SI3442BDV-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSOP-6
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI3
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SI3442BDV-GE3
Unità di peso:
0.000705 oz
Tags
SI3442BDV-T, SI3442B, SI3442, SI344, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.057ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH,2.5V,4.2A,DIODE,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.67W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.67W; Voltage Vgs Max:12V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI3442BDV-T1-GE3
DISTI # V36:1790_09216639		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 20V 3A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2284
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3442BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1919
  • 18000:$0.1969
  • 12000:$0.2029
  • 6000:$0.2109
  • 3000:$0.2179
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R (Alt: SI3442BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1609
  • 18000:€0.1729
  • 12000:€0.1879
  • 6000:€0.2179
  • 3000:€0.3199
SI3442BDV-T1-GE3
DISTI # 781-SI3442BDV-GE3		Vishay IntertechnologiesMOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
RoHS: Compliant		0
  • 1:$0.6100
  • 10:$0.4900
  • 100:$0.3800
  • 500:$0.3100
  • 1000:$0.2500
  • 3000:$0.2300
  • 6000:$0.2100
  • 9000:$0.2000
SI3442BDV-T1-GE3Vishay Intertechnologies 2173
    Immagine Parte # Descrizione
    SI3442BDV-T1-E3

    Mfr.#: SI3442BDV-T1-E3

    OMO.#: OMO-SI3442BDV-T1-E3

    		 MOSFET 20V 3A
    SI3442BDV-T1-GE3

    Mfr.#: SI3442BDV-T1-GE3

    OMO.#: OMO-SI3442BDV-T1-GE3

    		 MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
    SI3442BDV

    Mfr.#: SI3442BDV

    OMO.#: OMO-SI3442BDV-1190

    		 Nuovo e originale
    SI3442BDV-T1

    Mfr.#: SI3442BDV-T1

    OMO.#: OMO-SI3442BDV-T1-1190

    		 Nuovo e originale
    SI3442BDV-T1-E3

    Mfr.#: SI3442BDV-T1-E3

    OMO.#: OMO-SI3442BDV-T1-E3-VISHAY

    		 MOSFET N-CH 20V 3A 6-TSOP
    SI3442BDV-T1-GE3

    Mfr.#: SI3442BDV-T1-GE3

    OMO.#: OMO-SI3442BDV-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 3A 6-TSOP
    SI3442BDV-T1TE3

    Mfr.#: SI3442BDV-T1TE3

    OMO.#: OMO-SI3442BDV-T1TE3-1190

    		 Nuovo e originale
    SI3442BDVT1E3

    Mfr.#: SI3442BDVT1E3

    OMO.#: OMO-SI3442BDVT1E3-1190

    		 Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di SI3442BDV-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,61 USD
    0,61 USD
    10
    0,49 USD
    4,90 USD
    100
    0,38 USD
    38,00 USD
    500
    0,31 USD
    155,00 USD
    1000
    0,25 USD
    250,00 USD
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