 |  | | |
| PartNumber | ZXTN2010GTA | ZXTN2010G | ZXTN2010GTACT |
| Description | Bipolar Transistors - BJT 60V NPN Low Sat | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 150 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Maximum DC Collector Current | 6 A | - | - |
| Gain Bandwidth Product fT | 130 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | ZXTN2010 | - | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | 6 A | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXTN2010GTA | Bipolar Transistors - BJT 60V NPN Low Sat | |
| ZXTN2010G | Nuovo e originale | ||
| ZXTN2010GTACT | Nuovo e originale | ||
| ZXTN2010GTA | Bipolar Transistors - BJT 60V NPN Low Sat |