ZXTN2007

ZXTN2007GTA vs ZXTN2007G vs ZXTN2007GTA-CUT TAPE

 
PartNumberZXTN2007GTAZXTN2007GZXTN2007GTA-CUT TAPE
DescriptionBipolar Transistors - BJT 30V NPN Low Sat
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current7 A7 A-
Gain Bandwidth Product fT140 MHz140 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXTN200ZXTN200-
Height1.65 mm--
Length6.7 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current7 A7 A-
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-3W-
Transistor Type-NPN-
Current Collector Ic Max-7A-
Voltage Collector Emitter Breakdown Max-30V-
DC Current Gain hFE Min Ic Vce-100 @ 1A, 1V-
Vce Saturation Max Ib Ic-220mV @ 300mA, 6.5A-
Current Collector Cutoff Max-50nA (ICBO)-
Frequency Transition-140MHz-
Pd Power Dissipation-3 W-
Collector Emitter Voltage VCEO Max-30 V-
Collector Base Voltage VCBO-80 V-
Emitter Base Voltage VEBO-7 V-
DC Collector Base Gain hfe Min-100 at 10 mA at 1 V 100 at 1 A at 1 V 100 at 7 A at 1 V 20 at 20 A at 1 V-
DC Current Gain hFE Max-100-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
ZXTN2007GTA Bipolar Transistors - BJT 30V NPN Low Sat
ZXTN2007ZTA Bipolar Transistors - BJT 30V NPN Low Sat
ZXTN2007G Nuovo e originale
ZXTN2007Z Nuovo e originale
ZXTN2007GTA-CUT TAPE Nuovo e originale
ZXTN2007ZTA Bipolar Transistors - BJT 30V NPN Low Sat
ZXTN2007GTA Bipolar Transistors - BJT 30V NPN Low Sat
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