ZXMN2A03E

ZXMN2A03E6TA vs ZXMN2A03E6TC vs ZXMN2A03E6TAPBF

 
PartNumberZXMN2A03E6TAZXMN2A03E6TCZXMN2A03E6TAPBF
DescriptionMOSFET N ChannelMOSFET 20V N Chnl UMOS
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6SOT-26-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.6 A4.6 A-
Rds On Drain Source Resistance100 mOhms100 mOhms-
Vgs Gate Source Voltage12 V12 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W1.1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesZXMN2A--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width1.8 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time5.7 ns5.7 ns-
Product TypeMOSFETMOSFET-
Rise Time5.7 ns5.7 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18.5 ns18.5 ns-
Typical Turn On Delay Time4.7 ns4.7 ns-
Unit Weight0.000282 oz0.000529 oz-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN2A03E6TA MOSFET N Channel
ZXMN2A03E6TC MOSFET 20V N Chnl UMOS
ZXMN2A03E6TAPBF Nuovo e originale
ZXMN2A03E6TA IGBT Transistors MOSFET N Channel
Top