ZXMN10A08E6

ZXMN10A08E6TA vs ZXMN10A08E6TC

 
PartNumberZXMN10A08E6TAZXMN10A08E6TC
DescriptionMOSFET 100V N-Chnl UMOSMOSFET 100V N-Chnl UMOS
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-26-6SOT-26-6
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current1.9 A1.9 A
Rds On Drain Source Resistance250 mOhms250 mOhms
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge7.7 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.1 W1.1 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.3 mm1.3 mm
Length3.1 mm3.1 mm
ProductMOSFET Small SignalMOSFET Small Signal
SeriesZXMN10AZXMN10
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width1.8 mm1.8 mm
BrandDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min5 S-
Fall Time2.2 ns2.2 ns
Product TypeMOSFETMOSFET
Rise Time2.2 ns2.2 ns
Factory Pack Quantity300010000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time8 ns8 ns
Typical Turn On Delay Time3.4 ns3.4 ns
Unit Weight0.000529 oz0.000529 oz
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN10A08E6TA MOSFET 100V N-Chnl UMOS
ZXMN10A08E6TC MOSFET 100V N-Chnl UMOS
ZXMN10A08E6TA Trans MOSFET N-CH 100V 3.5A Automotive 6-Pin SOT-26 T/R
ZXMN10A08E6TC MOSFET 100V N-Chnl UMOS
ZXMN10A08E6 MOSFET N-CHANNEL 100V 1.9A SOT23-6, RL
ZXMN10A08E6QTA Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-26 T/R
ZXMN10A08E6T Nuovo e originale
ZXMN10A08E6TA-CUT TAPE Nuovo e originale
ZXMN10A08E6TC-CUT TAPE Nuovo e originale
Top