ZVN2110AS

ZVN2110ASTZ vs ZVN2110ASTOA vs ZVN2110ASTOB

 
PartNumberZVN2110ASTZZVN2110ASTOAZVN2110ASTOB
DescriptionMOSFET N-Chnl 100VMOSFET N-Chnl 100VMOSFET N-CH 100V 320MA TO92-3
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current320 mA320 mA-
Rds On Drain Source Resistance4 Ohms4 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation700 mW700 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelBulk-
Height4.01 mm--
Length4.77 mm--
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesZVN2110--
Transistor Type1 N-Channel1 N-Channel-
TypeFETFET-
Width2.41 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns8 ns-
Factory Pack Quantity20004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.016000 oz0.016000 oz-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
ZVN2110ASTZ MOSFET N-Chnl 100V
ZVN2110ASTOA MOSFET N-Chnl 100V
ZVN2110ASTOA MOSFET N-CH 100V 320MA TO92-3
ZVN2110ASTOB MOSFET N-CH 100V 320MA TO92-3
ZVN2110ASTZ IGBT Transistors MOSFET N-Chnl 100V
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