W989D

W989D2DBJX6I TR vs W989D6DBGX6I vs W989D2DBJX6I

 
PartNumberW989D2DBJX6I TRW989D6DBGX6IW989D2DBJX6I
DescriptionDRAM 512M mSDR, x32, 166MHz, Ind Temp, 46nm T&RDRAM 512M mSDR, x16, 166MHz, Ind Temp, 46nmDRAM 512M mSDR, x32, 166MHz, Ind Temp, 46nm
ManufacturerWinbondWinbondWinbond
Product CategoryDRAMDRAMDRAM
RoHSYYY
TypeSDRAM Mobile - LPSDRSDRAM Mobile - LPSDRSDRAM Mobile - LPSDR
Data Bus Width32 bit16 bit32 bit
Organization16 M x 3232 M x 1616 M x 32
Package / CaseVFBGA-90VFBGA-54VFBGA-90
Memory Size512 Mbit512 Mbit512 Mbit
Maximum Clock Frequency166 MHz166 MHz166 MHz
Supply Voltage Max1.95 V1.95 V1.95 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max38 mA38 mA38 mA
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
SeriesW989D2DBW989D6DBW989D2DB
PackagingReelTrayTray
BrandWinbondWinbondWinbond
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Moisture SensitiveYesYesYes
Product TypeDRAMDRAMDRAM
Factory Pack Quantity2500312240
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Produttore Parte # Descrizione RFQ
Winbond
Winbond
W989D6DBGX6I TR DRAM 512M mSDR, x16, 166MHz, Ind Temp, 46nm
W989D2DBJX6I TR DRAM 512M mSDR, x32, 166MHz, Ind Temp, 46nm T&R
W989D6DBGX6I DRAM 512M mSDR, x16, 166MHz, Ind Temp, 46nm
W989D2DBJX6I DRAM 512M mSDR, x32, 166MHz, Ind Temp, 46nm
W989D2DBJX6I TR 512M MSDR, X32, 166MHZ, IND TE
W989D6DBGX6I TR 512M MSDR, X16, 166MHZ, IND TE
W989D2DBJX6I IC DRAM 512M PARALLEL 90VFBGA
W989D6DBGX6I IC DRAM 512M PARALLEL 54VFBGA
W989D2CBJX6E Nuovo e originale
W989D2CBJX6I Nuovo e originale
W989D6CBGX-6E Nuovo e originale
W989D6CBGX-7E Nuovo e originale
W989D6CBGX6E Nuovo e originale
W989D6CBGX6E61242W800 Nuovo e originale
W989D6CBGX6I Nuovo e originale
W989D6CBGX7E Nuovo e originale
W989D6KBGX-6E Nuovo e originale
W989D6KBGX6E Nuovo e originale
W989D6KBGX6I Nuovo e originale
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