VP245

VP2450N3-G vs VP2450 vs VP2450N3

 
PartNumberVP2450N3-GVP2450VP2450N3
DescriptionMOSFET 500V 30OhmMOSFET 500V 30Ohm
ManufacturerMicrochipSUPERTEXSUPERTEX
Product CategoryMOSFETIC ChipsIC Chips
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance30 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulk--
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel--
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.016000 oz--
Produttore Parte # Descrizione RFQ
Microchip Technology
Microchip Technology
VP2450N3-G MOSFET 500V 30Ohm
VP2450N8-G MOSFET 500V 30Ohm
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VP2450 Nuovo e originale
VP2450N3 MOSFET 500V 30Ohm
VP2450N3-G MOSFET P-CH 500V 0.1A TO92-3
VP2450N8 MOSFET 500V 30Ohm
VP2450N8G Nuovo e originale
VP2450N8-G IGBT Transistors MOSFET 500V 30Ohm
VP2450N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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