VP211

VP2110K1-G vs VP2110 vs VP2110K1

 
PartNumberVP2110K1-GVP2110VP2110K1
DescriptionMOSFET 100V 12OhmMOSFET 100V 12Ohm
ManufacturerMicrochipSUPERTEXSUPERTEX
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current120 mA--
Rds On Drain Source Resistance12 Ohms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation360 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
TypeFET--
Width1.3 mm--
BrandMicrochip Technology--
Forward Transconductance Min150 mS--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time5 ns--
Typical Turn On Delay Time4 ns--
Unit Weight0.000282 oz--
Produttore Parte # Descrizione RFQ
Microchip Technology
Microchip Technology
VP2110K1-G MOSFET 100V 12Ohm
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