UMG6N

UMG6NTR vs UMG6N vs UMG6NTL

 
PartNumberUMG6NTRUMG6NUMG6NTL
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual Common EmitterDual Common Emitter-
Transistor PolarityNPNNPN-
Typical Input Resistor47 kOhms47 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTUMT-5--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA100 mA-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesUMG6NUMG6N-
PackagingReelTape & Reel (TR)-
DC Current Gain hFE Max600--
Height0.77 mm--
Length2 mm--
Width1.7 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMG6N--
Package Case-5-TSSOP, SC-70-5, SOT-353-
Mounting Type-Surface Mount-
Supplier Device Package-UMT5-
Power Max-150mW-
Transistor Type-2 NPN - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-47k-
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce-100 @ 1mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 1mA, 10mA-
Current Collector Cutoff Max---
Frequency Transition-250MHz-
Pd Power Dissipation-150 mW-
Collector Emitter Voltage VCEO Max-50 V-
DC Collector Base Gain hfe Min-100-
Produttore Parte # Descrizione RFQ
UMG6NTR Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
UMG6N Nuovo e originale
UMG6NTL Nuovo e originale
UMG6NTR Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
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