TSM7ND

TSM7ND65CI C0G vs TSM7ND60CI RLG vs TSM7ND60CI C0G

 
PartNumberTSM7ND65CI C0GTSM7ND60CI RLGTSM7ND60CI C0G
DescriptionMOSFET 650V 7A Single NChnl Power MOSFETMOSFET 600V 7A Single N-Chan Pwr MOSFETMOSFET 600V 7A Single NChnl Power MOSFET
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough Hole-Through Hole
Package / CaseITO-220-3-ITO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V600 V
Id Continuous Drain Current7 A7 A7 A
Rds On Drain Source Resistance1.35 Ohms1.2 Ohms-
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation50 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingTubeTubeTube
SeriesTSM7ND65CITSMTSM7ND60CI
Transistor Type1 N-ChannelSingle N-Channel Power MOSFET1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time23 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time19 ns--
Factory Pack Quantity2000502000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time8 ns--
Produttore Parte # Descrizione RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM7ND65CI C0G MOSFET 650V 7A Single NChnl Power MOSFET
TSM7ND60CI RLG MOSFET 600V 7A Single N-Chan Pwr MOSFET
TSM7ND65CI RLG MOSFET 650V 7A Single N-Chan Pwr MOSFET
TSM7ND60CI C0G MOSFET 600V 7A Single NChnl Power MOSFET
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