 |  | | |
| PartNumber | TSM70N900CI C0G | TSM70N900CH C5G | TSM70N900CH |
| Description | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | ITO-220-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 700 V | 700 V | - |
| Id Continuous Drain Current | 4.5 A | 4.5 A | - |
| Rds On Drain Source Resistance | 900 mOhms | 830 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 30 V | 10 V | - |
| Qg Gate Charge | 9.7 nC | 9.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 20 W | 50 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Fall Time | 48 ns | 48 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 54 ns | 54 ns | - |
| Factory Pack Quantity | 2000 | 3750 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 34 ns | 34 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Product | - | Rectifiers | - |
| Transistor Type | - | 1 N-Channel | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM70N900CP ROG | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm | |
| TSM70N900CI C0G | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm | ||
| TSM70N900CH C5G | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm | ||
| TSM70N900CH | MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm |