| PartNumber | TSM60NB150CF C0G | TSM60NB190CF C0G | TSM60NB190CI C0G |
| Description | MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 24A | MOSFET MOSFET, Single, N-Ch SJ, 600V, 18A | MOSFET 600V, 18A, Single N- N-Chan Power MOSFET |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 24 A | 18 A | 18 A |
| Rds On Drain Source Resistance | 124 mOhms | 170 mOhms | 190 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 43 nC | 32 nC | 31 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 62.5 W | 59.5 W | 33.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Transistor Type | N-Channel Power MOSFET | N-Channel Power MOSFET | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 21 ns | 17 ns | 21 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21 ns | 34 ns | 21 ns |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 52 ns | 26 ns | 95 ns |
| Typical Turn On Delay Time | 14 ns | 11 ns | 36 ns |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | ITO-220-3 |