| PartNumber | TSC5304DCP ROG | TSC5304DCH C5G |
| Description | Bipolar Transistors - BJT High voltage NPN Transistor with diode | Bipolar Transistors - BJT High voltage NPN Transistor with diode |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-252-3 | TO-251-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | 400 V |
| Collector Base Voltage VCBO | 700 V | 700 V |
| Emitter Base Voltage VEBO | 9 V | 9 V |
| Collector Emitter Saturation Voltage | 0.5 V | 0.5 V |
| Maximum DC Collector Current | 8 A | 8 A |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 37 | 37 |
| Packaging | Reel | Reel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor |
| Continuous Collector Current | 4 A | 4 A |
| DC Collector/Base Gain hfe Min | 10 | 10 |
| Pd Power Dissipation | 35 W | 35 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 | 1875 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.011993 oz | 0.011993 oz |