TK8A60W

TK8A60W,S4VX vs TK8A60W,S4VX(M vs TK8A60W

 
PartNumberTK8A60W,S4VXTK8A60W,S4VX(MTK8A60W
DescriptionMOSFET N-Ch 8A 30W FET 600V 570pF 18.5nCMOSFET DTMOS4 600V/8A TO220, PK
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance420 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge18.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation30 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameDTMOSIV--
Height15 mm--
Length10 mm--
SeriesTK8A60W--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time5.5 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.211644 oz--
Produttore Parte # Descrizione RFQ
Toshiba
Toshiba
TK8A60W,S4VX MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC
TK8A60W5,S5VX MOSFET Power MOSFET N-Channel
TK8A60W,S4VX Darlington Transistors MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC
TK8A60WS4VX MOSFET N-CH 8A 30W FET 600V 570PF
TK8A60W,S4VX(M MOSFET DTMOS4 600V/8A TO220, PK
TK8A60W Nuovo e originale
TK8A60W5 Nuovo e originale
TK8A60W5-S5VX Nuovo e originale
TK8A60W5S5VX Nuovo e originale
TK8A60WS4VX(M Nuovo e originale
TK8A60WS4VXM Nuovo e originale
TK8A60W5S5VX-ND Nuovo e originale
TK8A60WS4VX-ND Nuovo e originale
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