 |  | | |
| PartNumber | TK12E60W,S1VX | TK12E60W | TK12E60W,S1VX(S |
| Description | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | Power MOSFET Drivers | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 11.5 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 110 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK12E60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
TK12E60W,S1VX | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | |
| TK12E60W,S1VX | Darlington Transistors MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | ||
| TK12E60W | Nuovo e originale | ||
| TK12E60W,S1VX(S | Power MOSFET Drivers | ||
| TK12E60WS1VX | MOSFET POWER MOSFET TRANSISTOR | ||
| TK12E60WS1VXS | Nuovo e originale | ||
| TK12E60WS1VX-ND | Nuovo e originale |