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| PartNumber | TK10P60W,RVQ | TK10E60W,S1VX | TK10J80E,S1E |
| Description | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | TO-252-3 | TO-220-3 | TO-3PN-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 800 V |
| Id Continuous Drain Current | 9.7 A | 9.7 A | 10 A |
| Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | 700 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.7 V | 3.7 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 20 nC | 20 nC | 46 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 80 W | 100 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | - | - |
| Height | 2.3 mm | 15.1 mm | 20 mm |
| Length | 6.5 mm | 10.16 mm | 15.5 mm |
| Series | TK10P60W | TK10E60W | TK10J80E |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.5 mm | 4.45 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 5.5 ns | 5.5 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 22 ns | 40 ns |
| Factory Pack Quantity | 2000 | 50 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 75 ns | 75 ns | 140 ns |
| Typical Turn On Delay Time | 45 ns | 45 ns | 80 ns |
| Unit Weight | 0.139332 oz | 0.211644 oz | 0.245577 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
TK10P60W,RVQ | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | |
| TK10V60W,LVQ | MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A | ||
| TK10Q60W,S1VQ | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | ||
| TK10E60W,S1VX | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | ||
| TK10J80E,S1E | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | ||
| TK10S04K3L(T6L1,NQ | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.028 | ||
| TK10E60W | Nuovo e originale | ||
| TK10E60W,S1VX(S | Nuovo e originale | ||
| TK10P60W | Nuovo e originale | ||
| TK10P60W,RVQ | X35 PB-F POWER MOSFET TRANSIST | ||
| TK10P60W,RVQ(S | Trans MOSFET N-CH 600V 9.7A 3-Pin(2+Tab) DPAK | ||
| TK10P60WRGELQ(S | Nuovo e originale | ||
| TK10P60WRVQ | Trans MOSFET N 600V 9.7A 3-Pin DPAK Emboss T/R - Tape and Reel (Alt: TK10P60W,RVQ) | ||
| TK10Q60W | Nuovo e originale | ||
| TK10Q60W,S1VQ(S | Nuovo e originale | ||
| TK10S04K3L | Nuovo e originale | ||
| TK10S04K3L(T6L1NQ | Nuovo e originale | ||
| TK10V60W,LVQ(S | Nuovo e originale | ||
| TK10V60W.LVQ | Trans MOSFET N-CH 600V 9.7A 5-Pin DFN - Tape and Reel (Alt: TK10V60W,LVQ) | ||
| TK10V60WLVQ | MOSFET MOSFET TRAN DTMOS DFN | ||
| TK10E60W,S1VX | Darlington Transistors MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | ||
| TK10Q60W,S1VQ | Darlington Transistors MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | ||
| TK10V60W,LVQ | MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A | ||
| TK10J80E,S1E | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | ||
| TK10S04K3L(T6L1,NQ | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.028 | ||
| TK10E60WS1VX | MOSFET POWER MOSFET TRANSISTOR | ||
| TK10Q60WS1VQ | MOSFET POWER MOSFET TRANSISTOR | ||
| TK10J80E,S1E(S | Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-3PN | ||
| TK10E60WS1VX-ND | Nuovo e originale | ||
| TK10J80ES1E-ND | Nuovo e originale | ||
| TK10P60WRVQCT-ND | Nuovo e originale | ||
| TK10P60WRVQDKR-ND | Nuovo e originale | ||
| TK10P60WRVQTR-ND | Nuovo e originale | ||
| TK10Q60WS1VQ-ND | Nuovo e originale | ||
| TK10S04K3L(T6L1NQ-ND | Nuovo e originale | ||
| TK10V60WLVQCT-ND | Nuovo e originale | ||
| TK10V60WLVQDKR-ND | Nuovo e originale | ||
| TK10V60WLVQTR-ND | Nuovo e originale |