STW8N1

STW8N120K5 vs STW8N12D vs STW8N12D-E1

 
PartNumberSTW8N120K5STW8N12DSTW8N12D-E1
DescriptionMOSFET N-channel 1200 V, 0.62 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-3PF package
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance2 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge13.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation130 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesSTW8N120K5--
BrandSTMicroelectronics--
Fall Time27 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time15.5 ns--
Produttore Parte # Descrizione RFQ
STMicroelectronics
STMicroelectronics
STW8N120K5 MOSFET N-channel 1200 V, 0.62 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-3PF package
STW8N120K5 MOSFET N-CH 1200V 8A TO-247
STW8N12D Nuovo e originale
STW8N12D-E1 Nuovo e originale
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