STT

STT818B vs STT6N3LLH6 vs STT7P2UH7

 
PartNumberSTT818BSTT6N3LLH6STT7P2UH7
DescriptionBipolar Transistors - BJT PNP Lo-Volt Hi-GainMOSFET N-Ch 30V .025Ohm 6A STripFET VIMOSFET P-CH 20V 7A SOT23-6
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTMOSFETFETs - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-6SOT-23-6-
Transistor PolarityPNPN-ChannelP-Channel
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.21 V--
Maximum DC Collector Current3 A--
Minimum Operating Temperature- 65 C-- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesSTT818BSTT6N3LLH6STripFET
Height1.3 mm--
Length3.05 mm--
PackagingReelReelDigi-ReelR Alternate Packaging
Width1.75 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current- 3 A--
Pd Power Dissipation1200 mW1.6 W-
Product TypeBJTs - Bipolar TransistorsMOSFET-
Factory Pack Quantity30003000-
SubcategoryTransistorsMOSFETs-
Unit Weight0.000229 oz0.000229 oz0.001270 oz
Technology-SiSi
Number of Channels-1 Channel1 Channel
Vds Drain Source Breakdown Voltage-30 V-
Id Continuous Drain Current-6 A-
Rds On Drain Source Resistance-25 mOhms-
Vgs th Gate Source Threshold Voltage-1 V-
Vgs Gate Source Voltage-10 V-
Qg Gate Charge-3.6 nC-
Channel Mode-Enhancement-
Tradename-STripFET-
Transistor Type-1 N-Channel Power MOSFET1 P-Channel
Fall Time-5.4 ns84.5 ns
Rise Time-11.2 ns30.5 ns
Typical Turn Off Delay Time-9.4 ns128 ns
Typical Turn On Delay Time-4.8 ns12.5 ns
Package Case--SOT-23-6
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-6
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--1.6W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--2390pF @ 16V
FET Feature--Standard
Current Continuous Drain Id 25°C--7A (Tc)
Rds On Max Id Vgs--22.5 mOhm @ 3.5A, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--22nC @ 4.5V
Pd Power Dissipation--1.6 W
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--7 A
Vds Drain Source Breakdown Voltage--20 V
Vgs th Gate Source Threshold Voltage--1 V
Rds On Drain Source Resistance--22.5 mOhms
Qg Gate Charge--22 nC
  • Iniziare con
  • STT 1266
Produttore Parte # Descrizione RFQ
STMicroelectronics
STMicroelectronics
STT818B Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain
STT6N3LLH6 MOSFET N-Ch 30V .025Ohm 6A STripFET VI
STT818B Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain
STT6N3LLH6 MOSFET N-CH 30V 6A SOT23-6
STT7P2UH7 MOSFET P-CH 20V 7A SOT23-6
Infineon Technologies
Infineon Technologies
STT800N16P55XPSA1 Discrete Semiconductor Modules THYR / DIODE MODULE DK
STT800N16P55XPSA1 SCR MODULE POWERBLOCK PS55-1
STT6003TV1 Nuovo e originale
STT60GK08 Nuovo e originale
STT60GK08B Nuovo e originale
STT60GK12 Nuovo e originale
STT60GK14 Nuovo e originale
STT60GK16 Nuovo e originale
STT60GK16B Nuovo e originale
STT60GK16BV Nuovo e originale
STT60GK18 Nuovo e originale
STT622S Nuovo e originale
STT6301K Nuovo e originale
STT6405 Nuovo e originale
STT6601 Nuovo e originale
STT6603 Nuovo e originale
STT6P2UH7 Nuovo e originale
STT70GK12 Nuovo e originale
STT70GK14 Nuovo e originale
STT70GK16 Nuovo e originale
STT70GK16B Nuovo e originale
STT70GK18B Nuovo e originale
STT7105BKUC Nuovo e originale
STT74LS126AB1 Nuovo e originale
STT74S02B1 Nuovo e originale
STT75DS2F Nuovo e originale
STT774DB1 Nuovo e originale
STT800GK08 Nuovo e originale
STT800GK14 Nuovo e originale
STT818A Nuovo e originale
STT818A/818A Nuovo e originale
STT818A/EBT818BA Nuovo e originale
STT818B(818B) Nuovo e originale
STT818R Nuovo e originale
STT818R-ST Nuovo e originale
STT8205 Nuovo e originale
STT8205S Nuovo e originale
STT840-600202-001-R5 Nuovo e originale
STT866-1 Nuovo e originale
STT8844 Nuovo e originale
STT884D Nuovo e originale
STT8856 Nuovo e originale
STT886-1 Nuovo e originale
STT886-6 Nuovo e originale
STT8861 Nuovo e originale
Top