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| PartNumber | STP35N60M2-EP | STP35N65DM2 | STP35N60DM2 |
| Description | MOSFET | MOSFET | MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220 package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| Series | STP35N60M2-EP | STP35N65DM2 | STP35N60DM2 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| RoHS | - | - | Y |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-220-3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Id Continuous Drain Current | - | - | 28 A |
| Rds On Drain Source Resistance | - | - | 110 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Vgs Gate Source Voltage | - | - | 25 V |
| Qg Gate Charge | - | - | 54 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 210 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Tradename | - | - | MDmesh |
| Fall Time | - | - | 10.7 ns |
| Rise Time | - | - | 17 ns |
| Typical Turn Off Delay Time | - | - | 68 ns |
| Typical Turn On Delay Time | - | - | 21.2 ns |
| Unit Weight | - | - | 0.011640 oz |