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| PartNumber | STH180N10F3-2 | STH180N10F3-2-CUT TAPE | STH180N10F3 |
| Description | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | ||
| Manufacturer | STMicroelectronics | - | STM |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | H2PAK-2 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 4.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 114.6 nC | - | - |
| Pd Power Dissipation | 315 W | - | - |
| Configuration | Single | - | - |
| Tradename | STripFET | - | - |
| Packaging | Reel | - | Reel |
| Series | STH180N10F3-2 | - | N-channel STripFET |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | - | - |
| Fall Time | 6.9 ns | - | 6.9 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 97.1 ns | - | 97.1 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 315 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 4.5 mOhms |
| Qg Gate Charge | - | - | 114.6 nC |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
STMicroelectronics |
STH180N10F3-2 | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | |
| STH180N10F3-2 | MOSFET N-CH 100V 120A H2PAK | ||
| STH180N10F3-6 | IGBT Transistors MOSFET N-ch 100V 3.9 Ohm 180A STripFET III | ||
| STH180N10F3-2-CUT TAPE | Nuovo e originale | ||
| STH180N10F3 | Nuovo e originale |