STGWT30V

STGWT30V60DF vs STGWT30V60F

 
PartNumberSTGWT30V60DFSTGWT30V60F
DescriptionIGBT Transistors 600V 30A High Speed Trench Gate IGBTIGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT Transistors
RoHSYY
TechnologySiSi
Package / CaseTO-3PTO-3P-3
Mounting StyleThrough HoleThrough Hole
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V
Collector Emitter Saturation Voltage2.35 V2.3 V
Maximum Gate Emitter Voltage20 V20 V
Continuous Collector Current at 25 C60 A60 A
Pd Power Dissipation258 W260 W
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
SeriesSTGWT30V60DFSTGWT30V60F
PackagingTubeTube
BrandSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA
Product TypeIGBT TransistorsIGBT Transistors
Factory Pack Quantity300300
SubcategoryIGBTsIGBTs
Unit Weight0.238311 oz0.245577 oz
Continuous Collector Current Ic Max-30 A
Produttore Parte # Descrizione RFQ
STMicroelectronics
STMicroelectronics
STGWT30V60DF IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGWT30V60F IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
STGWT30V60DF IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGWT30V60F IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
STGWT30V60DF GWT30V60DF Nuovo e originale
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