STGD14

STGD14NC60KT4 vs STGD14NC60K vs STGD14NC60K T4

 
PartNumberSTGD14NC60KT4STGD14NC60KSTGD14NC60K T4
DescriptionIGBT Transistors N-channel MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-252-3--
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V+/- 20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGD14NC60KPowerMESH-
PackagingReelDigi-ReelR Alternate Packaging-
Continuous Collector Current Ic Max25 A25 A-
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
TradenamePowerMESH--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Input Type-Standard-
Mounting Type-Surface Mount-
Supplier Device Package-D-Pak-
Power Max-80W-
Reverse Recovery Time trr---
Current Collector Ic Max-25A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm---
Vce on Max Vge Ic-2.5V @ 15V, 7A-
Switching Energy-82μJ (on), 155μJ (off)-
Gate Charge-34.4nC-
Td on off 25°C-22.5ns/116ns-
Test Condition-390V, 7A, 10 Ohm, 15V-
Collector Emitter Voltage VCEO Max-600 V-
Produttore Parte # Descrizione RFQ
STMicroelectronics
STMicroelectronics
STGD14NC60KT4 IGBT Transistors N-channel MOSFET
STGD14NC60KT4 IGBT Transistors N-channel MOSFET
STGD14NC60K Nuovo e originale
STGD14NC60K T4 Nuovo e originale
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