| PartNumber | STGB6M65DF2 | STGB6NC60HDT4 | STGB6NC60HD-1 |
| Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss | IGBT Transistors PowerMESH TM IGBT | IGBT Transistors N Ch 6A 600V |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | D2PAK-3 | D2PAK-3 | I2PAK-3 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.55 V | 2.7 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 12 A | - | - |
| Pd Power Dissipation | 88 W | 80 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Series | STGB6M65DF2 | STGB6NC60HDT4 | STGB6NC60HD |
| Continuous Collector Current Ic Max | 12 A | 15 A | 15 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 uA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Packaging | - | Reel | Tube |
| Height | - | 4.6 mm | 9.35 mm |
| Length | - | 10.4 mm | 10.4 mm |
| Width | - | 9.35 mm | 4.6 mm |
| Continuous Collector Current | - | 12 A | - |
| Unit Weight | - | 0.079014 oz | 0.084199 oz |