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| PartNumber | STB24NM60N | STB24NM65N |
| Description | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | MOSFET N-Channel 650V 0.16 Ohms 19A |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V |
| Id Continuous Drain Current | 17 A | 19 A |
| Rds On Drain Source Resistance | 168 mOhms | 160 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 25 V |
| Qg Gate Charge | 46 nC | - |
| Pd Power Dissipation | 125 W | 160 W |
| Configuration | Single | Single |
| Tradename | MDmesh | - |
| Packaging | Reel | Reel |
| Series | STB24NM60N | STB24NM65N |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 37 ns | 20 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 16.5 ns | 10 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Height | - | 4.6 mm |
| Length | - | 10.4 mm |
| Type | - | Power MOSFETs |
| Width | - | 9.35 mm |
| Forward Transconductance Min | - | 14 S |
| Typical Turn Off Delay Time | - | 80 ns |
| Typical Turn On Delay Time | - | 25 ns |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
STMicroelectronics |
STB24NM60N | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | |
| STB24NM65N | MOSFET N-Channel 650V 0.16 Ohms 19A | ||
| STB24NM60N | MOSFET N-CH 600V 17A D2PAK | ||
| STB24NM65N | MOSFET N-CH 650V 19A D2PAK | ||
| STB24NM65NT4 | Nuovo e originale |