SSM3J35MFV,L

SSM3J35MFV,L3F vs SSM3J35MFV,L3F(T vs SSM3J35MFV,L3SOF

 
PartNumberSSM3J35MFV,L3FSSM3J35MFV,L3F(TSSM3J35MFV,L3SOF
DescriptionMOSFET Small-signal MOSFET ID -0.1A, -20V VDSS
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23F-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance4.3 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge---
Minimum Operating Temperature---
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesSSM3J35MFV--
Transistor Type1 P-Channel--
BrandToshiba--
Forward Transconductance Min77 mS--
Product TypeMOSFET--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time251 ns--
Typical Turn On Delay Time175 ns--
Produttore Parte # Descrizione RFQ
Toshiba
Toshiba
SSM3J35MFV,L3F MOSFET Small-signal MOSFET ID -0.1A, -20V VDSS
SSM3J35MFV,L3F MOSFET P-CH 20V 0.1A VESM
SSM3J35MFV,L3F(T Nuovo e originale
SSM3J35MFV,L3SOF Nuovo e originale
SSM3J35MFV,L3SOF(T Nuovo e originale
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