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| PartNumber | SQS460ENW-T1_GE3 | SQS460EN-T1_GE3 | SQS462EN-T1-GE3 |
| Description | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | MOSFET 60V 8A 39W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8W-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 8 A | 8 A | - |
| Rds On Drain Source Resistance | 36 mOhms | 30 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 13 nC | 20 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 39 W | 39 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 19 ns | - |
| Typical Turn On Delay Time | 5 ns | 5 ns | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | TrenchFET | TrenchFET |
| Height | - | 1.04 mm | 1.04 mm |
| Length | - | 3.3 mm | 3.3 mm |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 3.3 mm | 3.3 mm |
| Forward Transconductance Min | - | 16 S | - |
| Part # Aliases | - | - | SQS462EN-GE3 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQS460ENW-T1_GE3 | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | |
| SQS460EN-T1_GE3 | MOSFET 60V 8A 39W AEC-Q101 Qualified | ||
| SQS462EN-T1_GE3 | MOSFET 60V 8A 33W AEC-Q101 Qualified | ||
| SQS462EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3 | ||
| SQS460EN-T1-GE3 | IGBT Transistors MOSFET 60V 8A 39W | ||
| SQS460EN-T1_GE3-CUT TAPE | Nuovo e originale | ||
| SQS462EN-T1_GE3-CUT TAPE | Nuovo e originale | ||
| SQS460ENT1GE3 | Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQS462EN | Nuovo e originale | ||
| SQS462EN-T1-GE3 | N-CHANNEL 60V PPAK 1213 | ||
| SQS464EEN-T1-GE3 | Nuovo e originale | ||
| SQS466EEN-T1-GE3 | Nuovo e originale | ||
Vishay |
SQS460EN-T1_GE3 | MOSFET N-CH 60V 8A | |
| SQS462EN-T1_GE3 | MOSFET N-CH 60V 8A 1212-8 |