 |  | | |
| PartNumber | SQP100N04-3m6_GE3 | SQP100N04-3M6 | SQP100P06-9M |
| Description | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 135 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 120 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 200 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQP100P06-9M3L_GE3 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | |
| SQP100N04-3m6_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQP100N04-3M6 | Nuovo e originale | ||
| SQP100P06-9M | Nuovo e originale | ||
| SQP100SZ | Nuovo e originale |