| PartNumber | SQM60N06-15_GE3 | SQM60030E_GE3 | SQM60N20-35-GE3 |
| Description | MOSFET 60V 60A 100W AEC-Q101 Qualified | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM60N20-35_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 80 V | - |
| Id Continuous Drain Current | 56 A | 120 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 2.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 50 nC | 165 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 107 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Tube | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 61 S | 105 S | - |
| Fall Time | 7 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 13 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 39 ns | - |
| Typical Turn On Delay Time | 11 ns | 19 ns | - |
| Unit Weight | 0.050717 oz | 0.077603 oz | 0.077603 oz |
| Height | - | - | 4.83 mm |
| Length | - | - | 10.67 mm |
| Width | - | - | 9.65 mm |