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| PartNumber | SQJ951EP-T1_GE3 | SQJ946EP-T1_GE3 | SQJ942EP-T1_GE3 |
| Description | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | MOSFET 40V 15A AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 40 V | 40 V |
| Id Continuous Drain Current | 30 A | 15 A | 15 A, 45 A |
| Rds On Drain Source Resistance | 14 mOhms | 27 mOhms, 27 mOhms | 18 mOhms, 9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | 1.3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 50 nC | 20 nC, 20 nC | 19.7 nC, 33.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 56 W | 27 W | 17 W, 48 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 2 P-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 18 S | 29 S, 29 S | 46 S, 73 S |
| Fall Time | 28 ns | 2 ns, 2 ns | 12 ns, 16 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 3 ns, 3 ns | 25 ns, 31 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | 14 ns, 14 ns | 29 ns, 52 ns |
| Typical Turn On Delay Time | 12 ns | 7 ns, 7 ns | 33 ns, 40 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Height | - | - | 1.04 mm |
| Length | - | - | 6.15 mm |
| Width | - | - | 5.13 mm |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ958EP-T1_GE3 | MOSFET Dual 60V PowerPAK AEC-Q101 Qualified | |
| SQJ974EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ952EP-T1_GE3 | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ968EP-T1_GE3 | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | ||
| SQJ951EP-T1_GE3 | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | ||
| SQJ960EP-T1_GE3 | MOSFET 60V 8A 34W AEC-Q101 Qualified | ||
| SQJ963EP-T1_GE3 | MOSFET -60V -8A 27W AEC-Q101 Qualified | ||
| SQJ980AEP-T1_GE3 | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | ||
| SQJ992EP-T1_GE3 | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | ||
| SQJ956EP-T1_GE3 | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ946EP-T1_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ942EP-T1_GE3 | MOSFET 40V 15A AEC-Q101 Qualified | ||
| SQJ962EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ992EP-T1_GE3 | ||
| SQJ963EP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQJ963EP-T1_GE3 | ||
Vishay |
SQJ951EP-T1_GE3 | MOSFET 2P-CH 30V 30A PPAK | |
| SQJ962EP-T1-GE3 | IGBT Transistors MOSFET 60V 8A 25W | ||
| SQJ946EP-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK SO8 | ||
| SQJ952EP-T1_GE3 | MOSFET 2 N-CH 60V POWERPAK SO8 | ||
| SQJ963EP-T1_GE3 | MOSFET 2 P-CH 60V POWERPAK SO8 | ||
| SQJ960EP-T1_GE3 | MOSFET 2N-CH 60V 8A | ||
| SQJ968EP-T1_GE3 | MOSFET 2 N-CH 60V POWERPAK SO8 | ||
| SQJ974EP-T1_GE3 | MOSFET 2 N-CH 100V POWERPAK SO8 | ||
| SQJ980AEP-T1_GE3 | MOSFET 2 N-CH 75V POWERPAK SO8 | ||
| SQJ992EP-T1_GE3 | MOSFET 2N-CH 60V 15A POWERPAKSO8 | ||
| SQJA02EP-T1_GE3 | MOSFET N-CH 60V 60A POWERPAKSO-8 | ||
| SQJ963EP-T1-GE3 | IGBT Transistors MOSFET -60V -8A 27W TrenchFET | ||
| SQJ960EP-T1_GE3-CUT TAPE | Nuovo e originale | ||
| SQJ942EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ942EP-T1_GE3 | ||
| SQJ942EPT1GE3 | Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ946EP | Nuovo e originale | ||
| SQJ951EP | Nuovo e originale | ||
| SQJ951EP-T1-GE3 | Trans MOSFET P-CH 30V 30A Automotive 8-Pin PowerPAK SO T/R | ||
| SQJ960EP | Nuovo e originale | ||
| SQJ960EP-T1-GE3 | N-CHANNEL 60V PPAK SO-8L | ||
| SQJ963EP | Nuovo e originale | ||
| SQJ964EP | Nuovo e originale | ||
| SQJ964EP-T1-GE3 | MOSFET 60V 8A 35W N-Ch Automotive | ||
| SQJ964EPT1-GE3 | Nuovo e originale | ||
| SQJ968EP | Nuovo e originale | ||
| SQJ968EP-T1-GE3 | DUAL N-CHANNEL 60-V (D-S) 175C | ||
| SQJ968EPT1GE3 | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ970EP-T1-GE3 | MOSFET 40V 8A 48W N-Ch Automotive | ||
| SQJ970EPT1-GE3 | Nuovo e originale | ||
| SQJ974EP-T1-GE3 | Nuovo e originale | ||
| SQJ980AEP | Nuovo e originale | ||
| SQJ980AEP-T1-GE3 | DUAL N-CHANNEL 75-V (D-S) 175C | ||
| SQJ980AEPT1GE3 | Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ980EP-T1-GE3 | Nuovo e originale | ||
| SQJ992EP | Nuovo e originale | ||
| SQJ992EP-T1-GE3 | Trans MOSFET N-CH 60V 15A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |