SQD19P06-60L

SQD19P06-60L_T4GE3 vs SQD19P06-60L_GE3 vs SQD19P06-60L-GE3

 
PartNumberSQD19P06-60L_T4GE3SQD19P06-60L_GE3SQD19P06-60L-GE3
DescriptionMOSFET -60V Vds TO-252 AEC-Q101 QualifiedMOSFET 60V 20A 46W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance56 mOhms55 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.5 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge27 nC27 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation46 W46 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time12 ns12 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns9 ns-
Factory Pack Quantity250020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.011993 oz0.050717 oz0.050717 oz
Height-2.38 mm-
Length-6.73 mm-
Width-6.22 mm-
Forward Transconductance Min-20 S-
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD19P06-60L_T4GE3 MOSFET -60V Vds TO-252 AEC-Q101 Qualified
SQD19P06-60L_GE3 MOSFET 60V 20A 46W AEC-Q101 Qualified
SQD19P06-60L-GE3 MOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3
SQD19P06-60L-GE3 P-CHANNEL 60-V (D-S), 175C MOS
SQD19P06-60L Nuovo e originale
SQD19P06-60L-E3 Nuovo e originale
SQD19P06-60L-GE3 (PCN Nuovo e originale
Vishay
Vishay
SQD19P06-60L_GE3 MOSFET P-CH 60V 20A TO252
SQD19P06-60L_T4GE3 MOSFET P-CH 60V 20A TO252AA
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