SQD

SQD19P06-60L_T4GE3 vs SQD19P06-60L_GE3 vs SQD19P06-60L-GE3

 
PartNumberSQD19P06-60L_T4GE3SQD19P06-60L_GE3SQD19P06-60L-GE3
DescriptionMOSFET -60V Vds TO-252 AEC-Q101 QualifiedMOSFET 60V 20A 46W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance56 mOhms55 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.5 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge27 nC27 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation46 W46 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time12 ns12 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns9 ns-
Factory Pack Quantity250020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.011993 oz0.050717 oz0.050717 oz
Height-2.38 mm-
Length-6.73 mm-
Width-6.22 mm-
Forward Transconductance Min-20 S-
  • Iniziare con
  • SQD 231
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD19P06-60L_T4GE3 MOSFET -60V Vds TO-252 AEC-Q101 Qualified
SQD19P06-60L_GE3 MOSFET 60V 20A 46W AEC-Q101 Qualified
SQD23N06-31L_GE3 MOSFET 60V 23A 100W AEC-Q101 Qualified
SQD25N15-52_GE3 MOSFET 150V 25A 136W AEC-Q101 Qualified
SQD25N06-22L_T4GE3 MOSFET 60V 25A 62W AEC-Q101 Qualified
SQD25N06-22L_GE3 MOSFET 60V 25A 62W AEC-Q101 Qualified
SQD23N06-31L_T4GE3 MOSFET 60V Vds 20V Vgs TO-252
SQD25N15-52-T4_GE3 MOSFET 150V Vds 20V Vgs TO-252
SQD23N06-31L-GE3 MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
SQD25N15-52-GE3 MOSFET RECOMMENDED ALT 781-SQD25N15-52_GE3
SQD19P06-60L-GE3 MOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3
SQD25N15-52-GE3 RF Bipolar Transistors MOSFET 150V 25A 136W 5.2mohm @ 10V
SQD19P06-60L-GE3 P-CHANNEL 60-V (D-S), 175C MOS
SQD23N06-31L-GE3 N-CHANNEL 60V DPAK
SQD25N06-22L-T4GE3 RF Bipolar Transistors MOSFET 60V 25A 62W
SQD25N06-22L_GE3-CUT TAPE Nuovo e originale
SQD19P06-60L-GE3 (PCN Nuovo e originale
SQD19P0660LGE3 Nuovo e originale
SQD200A6 Nuovo e originale
SQD200AA100(120) Nuovo e originale
SQD200AA100/120 Nuovo e originale
SQD200AA60 Nuovo e originale
SQD200BA60 Nuovo e originale
SQD2011K Nuovo e originale
SQD23N06-31L Nuovo e originale
SQD23N0631LGE3 Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
SQD25N06-22L Nuovo e originale
SQD25N06-35L-GE3 MOSFET RECOMMENDED ALT 78-SQD25N06-22LT4GE
SQD25N0622LGE3 Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
SQD25N15-52 Nuovo e originale
SQD25N15-52-E3 Nuovo e originale
SQD2M Nuovo e originale
SQD2V Nuovo e originale
SQD300A100 Nuovo e originale
SQD300A100E Nuovo e originale
SQD300A60E Nuovo e originale
Vishay
Vishay
SQD23N06-31L_GE3 MOSFET N-CH 60V 23A TO252
SQD25N15-52_GE3 MOSFET N-CH 150V 25A TO252
SQD19P06-60L_GE3 MOSFET P-CH 60V 20A TO252
SQD19P06-60L_T4GE3 MOSFET P-CH 60V 20A TO252AA
SQD25N06-22L_GE3 MOSFET N-CH 60V 25A TO252
SQD200A40 Nuovo e originale
SQD200AA100 Nuovo e originale
SQD300A(BA)60 Nuovo e originale
SQD200A60 Nuovo e originale
SQD25N06-22L-GE3 MOSFET 60V 25A 62W N-Ch Automotive
SQD2C Nuovo e originale
SQD300A40 Nuovo e originale
SQD300A60 Nuovo e originale
SQD300AA100 Nuovo e originale
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