PartNumber | SQ1902AEL-T1_GE3 | SQ1902AEL-T1-GE3 |
Description | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | |
Manufacturer | Vishay | - |
Product Category | MOSFET | - |
RoHS | Y | - |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | SOT-363-6 | - |
Number of Channels | 2 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - |
Id Continuous Drain Current | 780 mA | - |
Rds On Drain Source Resistance | 200 mOhms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - |
Vgs Gate Source Voltage | 12 V | - |
Qg Gate Charge | 1.2 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | - |
Pd Power Dissipation | 430 mW | - |
Configuration | Dual | - |
Channel Mode | Enhancement | - |
Qualification | AEC-Q101 | - |
Tradename | TrenchFET | - |
Packaging | Reel | - |
Series | SQ | - |
Transistor Type | 2 N-Channel | - |
Brand | Vishay / Siliconix | - |
Forward Transconductance Min | 1.1 S | - |
Fall Time | 18 ns | - |
Product Type | MOSFET | - |
Rise Time | 22 ns | - |
Factory Pack Quantity | 3000 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 20 ns | - |
Typical Turn On Delay Time | 10 ns | - |
Unit Weight | 0.000265 oz | - |