 | | | |
| PartNumber | SPS04N60C3 | SPS04N60C3 E8177 | SPS04N60C3AKMA1 |
| Description | IGBT Transistors MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | - Bulk (Alt: SPS04N60C3AKMA1) | |
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Tube | - | - |
| Part Aliases | SP000307419 SPS04N60C3BKMA1 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | IPAK-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 9.5 ns | - | - |
| Rise Time | 2.5 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Rds On Drain Source Resistance | 950 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 58.5 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| SPS04N60C3 | IGBT Transistors MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | ||
| SPS04N60C3AKMA1 | - Bulk (Alt: SPS04N60C3AKMA1) | ||
| SPS04N60C3 E8177 | Nuovo e originale | ||
Infineon Technologies |
SPS04N60C3BKMA1 | MOSFET N-CH 650V 4.5A TO251-3 |