 | | | |
| PartNumber | SPP02N80C3 | SPP02N80C3,02N80C3 | SPP02N80C3,02N80C3, |
| Description | IGBT Transistors MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 | ||
| Manufacturer | INF | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Tube | - | - |
| Part Aliases | SP000683150 SPP02N80C3XK SPP02N80C3XKSA1 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 18 ns | - | - |
| Rise Time | 15 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Rds On Drain Source Resistance | 2.7 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 65 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
SPP02N80C3XKSA1 | MOSFET LOW POWER_LEGACY | |
| SPP02N80C3 | IGBT Transistors MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 | ||
| SPP02N80C3,02N80C3 | Nuovo e originale | ||
| SPP02N80C3,02N80C3, | Nuovo e originale | ||
| SPP02N80C3,SPA02N80C3,SP | Nuovo e originale | ||
| SPP02N80C3,SPP02N60C3 | Nuovo e originale | ||
| SPP02N80C3,SPP07N65C3 | Nuovo e originale | ||
| SPP02N80C3X | Nuovo e originale | ||
Infineon Technologies |
SPP02N80C3XKSA1 | MOSFET N-CH 800V 2A TO-220AB |