 | | | |
| PartNumber | SPD50N03S207GBTMA1 | SPD50N03S2-07 | SPD50N03S2L-06 |
| Description | MOSFET LV POWER MOS | MOSFET N-Ch 30V 50A DPAK-2 | MOSFET N-Ch 30V 50A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | G SP000443920 SPD50N03S2-07 SPD50N03S207GXT | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| RoHS | - | Y | Y |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 50 A | 50 A |
| Rds On Drain Source Resistance | - | 7.3 mOhms | 6.4 mOhms |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 136 W | 136 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 25 ns | 24 ns |
| Rise Time | - | 36 ns | 19 ns |
| Factory Pack Quantity | - | 2500 | 2500 |
| Typical Turn Off Delay Time | - | 27 ns | 35 ns |
| Typical Turn On Delay Time | - | 14 ns | 8 ns |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD50P03L G | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | |
| SPD50P03LGBTMA1 | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | ||
| SPD50P03LGXT | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | ||
| SPD50N03S2-07 | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N03S207GBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| SPD50N03S2L-06 | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N03S2L06GBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| SPD50N03S2L06T | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N06S2L-13 | MOSFET N-CH 55V 50A DPAK | ||
| SPD50P03LGBTMA1 | MOSFET P-CH 30V 50A TO-252 | ||
| SPD50P03LGXT | MOSFET P-CH 30V 50A TO-252 | ||
Infineon Technologies |
SPD50N03S207GBTMA1 | MOSFET LV POWER MOS | |
| SPD50N03S2-07 | MOSFET N-Ch 30V 50A DPAK-2 | ||
| SPD50N03S2L-06 | MOSFET N-Ch 30V 50A DPAK-2 | ||
| SPD50N03S2L-06 G | IGBT Transistors MOSFET N-Ch 30V 50A DPAK-2 | ||
| SPD5003 | Nuovo e originale | ||
| SPD50N03 | Nuovo e originale | ||
| SPD50N03L | Nuovo e originale | ||
| SPD50N03S2 | Nuovo e originale | ||
| SPD50N03S2-07 G | - Bulk (Alt: SPD50N03S2-07 G) | ||
| SPD50N03S2-07G | - Bulk (Alt: SPD50N03S2-07G) | ||
| SPD50N03S2-7 | Nuovo e originale | ||
| SPD50N03S207 | Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD50N03S2L | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N03S2L-06G | Power Field-Effect Transistor, 50A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD50N03S2L-13 | Nuovo e originale | ||
| SPD50N03SZ-07 | Nuovo e originale | ||
| SPD50N06S2-14 | Nuovo e originale | ||
| SPD50P03 | Nuovo e originale | ||
| SPD50P03 50P03L | Nuovo e originale | ||
| SPD50P03L | Power Field-Effect Transistor, 50A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD50P03L G | Trans MOSFET P-CH 30V 50A Automotive 5-Pin(4+Tab) TO-252 | ||
| SPD50P03LG | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 30V, 0.007OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | ||
| SPD50P03LGINCT-ND | Nuovo e originale | ||
| SPD50P03LGINDKR-ND | Nuovo e originale | ||
| SPD50P03LGINTR-ND | Nuovo e originale | ||
| SPD50P03LGS | Nuovo e originale | ||
| SPD50P03LT | Nuovo e originale |