SPD06N8

SPD06N80C3ATMA1 vs SPD06N80C3BTMA1

 
PartNumberSPD06N80C3ATMA1SPD06N80C3BTMA1
DescriptionMOSFET LOW POWER_LEGACYMOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-TO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current6 A6 A
Rds On Drain Source Resistance900 mOhms780 mOhms
Vgs th Gate Source Threshold Voltage2.1 V2.1 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge31 nC41 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation83 W83 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameCoolMOS-
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesCoolMOS C3XPD06N80
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Fall Time8 ns8 ns
Product TypeMOSFETMOSFET
Rise Time15 ns15 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time72 ns72 ns
Typical Turn On Delay Time25 ns25 ns
Part # AliasesSP001117772 SPD06N80C3SP000318350 SPD06N80C3 SPD06N80C3XT
Unit Weight0.016579 oz0.139332 oz
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
SPD06N80C3ATMA1 MOSFET LOW POWER_LEGACY
SPD06N80C3ATMA1 MOSFET N-CH 800V 6A 3TO252
SPD06N80C3BTMA1 MOSFET N-CH 800V 6A DPAK
Infineon Technologies
Infineon Technologies
SPD06N80C3BTMA1 MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
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SPD06N80C3ATMA1-CUT TAPE Nuovo e originale
SPD06N80C3(SP001117772) Nuovo e originale
SPD06N80C3(SP001117772)- Nuovo e originale
SPD06N80C3,06N80C3 Nuovo e originale
SPD06N80C3S Nuovo e originale
SPD06N80C3XT MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
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