SMBTA06E632

SMBTA06E6327HTSA1 vs SMBTA06E6327 vs SMBTA06E6327 (INFINEON)

 
PartNumberSMBTA06E6327HTSA1SMBTA06E6327SMBTA06E6327 (INFINEON)
DescriptionBipolar Transistors - BJT NPN 80 V 500 mATrans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R (Alt: SP000011686)
ManufacturerInfineonInfineon Technologies-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.25 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesSMBTA06SMBTA06-
Height1 mm--
Length2.9 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandInfineon Technologies--
Continuous Collector Current500 mA--
Pd Power Dissipation330 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases06 E6327 SMBTA SMBTA6E6327XT SP000011686--
Unit Weight0.000282 oz0.050717 oz-
Part Aliases-06 E6327 SMBTA SMBTA06E6327XT SP000011686-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-PG-SOT23-3-
Power Max-330mW-
Transistor Type-NPN-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-80V-
DC Current Gain hFE Min Ic Vce-100 @ 100mA, 1V-
Vce Saturation Max Ib Ic-250mV @ 10mA, 100mA-
Current Collector Cutoff Max-100nA-
Frequency Transition-100MHz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
SMBTA06E6327HTSA1 Bipolar Transistors - BJT NPN 80 V 500 mA
SMBTA06E6327HTSA1 TRANS NPN 80V 0.5A SOT-23
SMBTA06E6327 Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R (Alt: SP000011686)
SMBTA06E6327 (INFINEON) Nuovo e originale
SMBTA06E6327XT Bipolar Transistors - BJT NPN 80 V 500 mA
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