SIZ700

SIZ700 vs SIZ700DI-T1-GE3 vs SIZ700DT

 
PartNumberSIZ700SIZ700DI-T1-GE3SIZ700DT
Description
ManufacturerVishay Siliconix--
Product CategoryFETs - Arrays--
SeriesTrenchFETR--
PackagingTape & Reel (TR)--
Part AliasesSIZ700DT-GE3--
Mounting StyleSMD/SMT--
Package Case6-PowerPair--
TechnologySi--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Number of Channels2 Channel--
Supplier Device Package6-PowerPair--
ConfigurationDual--
FET Type2 N-Channel (Half Bridge)--
Power Max2.36W, 2.8W--
Transistor Type2 N-Channel--
Drain to Source Voltage Vdss20V--
Input Capacitance Ciss Vds1300pF @ 10V--
FET FeatureStandard--
Current Continuous Drain Id 25°C16A--
Rds On Max Id Vgs8.6 mOhm @ 15A, 10V--
Vgs th Max Id2.2V @ 250μA--
Gate Charge Qg Vgs35nC @ 10V--
Pd Power Dissipation2.36 W 2.8 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time8 ns 10 ns--
Rise Time9 ns 8 ns--
Vgs Gate Source Voltage16 V--
Id Continuous Drain Current16 A--
Vds Drain Source Breakdown Voltage20 V--
Rds On Drain Source Resistance7 mOhms 4.7 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time25 ns 47 ns--
Typical Turn On Delay Time8 ns 12 ns--
Forward Transconductance Min60 S 100 S--
Channel ModeEnhancement--
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SIZ700DT-T1-GE3 MOSFET RECOMMENDED ALT 781-SIZ710DT-T1-GE3
Vishay
Vishay
SIZ700DT-T1-GE3 RF Bipolar Transistors MOSFET 20V 16A 2.36/2.8W 8.6/5.8mohm @ 10V
SIZ700 Nuovo e originale
SIZ700DI-T1-GE3 Nuovo e originale
SIZ700DT Nuovo e originale
SIZ700DT-T1 Nuovo e originale
SIZ700DT-T1-E3 Nuovo e originale
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