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| PartNumber | SISS92DN-T1-GE3 | SISS98DN-T1-GE3 |
| Description | MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S | MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8SH-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 200 V |
| Id Continuous Drain Current | 12.3 A | 14.1 A |
| Rds On Drain Source Resistance | 173 mOhms | 85 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 16 nC | 18.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 65.8 W | 57 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET; PowerPAK | ThunderFET, PowerPAK |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 12 S | 16.5 S |
| Fall Time | 6 ns | 16 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4 ns | 16 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | 16 ns |
| Typical Turn On Delay Time | 10 ns | 8 ns |
| Height | - | 1.04 mm |
| Length | - | 3.3 mm |
| Series | - | SIS |
| Width | - | 3.3 mm |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISS92DN-T1-GE3 | MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S | |
| SISS98DN-T1-GE3 | MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S | ||
Vishay |
SISS98DN-T1-GE3 | MOSFET N-CH 200V 14.1A 1212-8 | |
| SISS92DN-T1-GE3 | MOSFET N-CH 250V POWERPAK 1212 | ||
| SISS98DNT1GE3 | Power Field-Effect Transisto |