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| PartNumber | SISA01DN-T1-GE3 | SISA04DN-T1-GE3 |
| Description | MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 60 A | 40 A |
| Rds On Drain Source Resistance | 4.9 mOhms | 1.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 1.1 V |
| Vgs Gate Source Voltage | 16 V, - 20 V | 20 V, - 16 V |
| Qg Gate Charge | 56 nC | 77 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 52 W |
| Configuration | Single | Single |
| Tradename | TrenchFET, PowerPAK | TrenchFET |
| Packaging | Reel | Reel |
| Series | SIS | SIS |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6 ns | 17 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | 25 ns |
| Typical Turn On Delay Time | 15 ns | 24 ns |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 105 S |
| Part # Aliases | - | SISA04DN-GE3 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISA01DN-T1-GE3 | MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 | |
| SISA04DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
Vishay |
SISA01DN-T1-GE3 | MOSFET P-CH 30V POWERPAK 1212-8 | |
| SISA04DN-T1-GE3 | MOSFET N-CH 30V 40A 1212-8 | ||
| SISA04DNT1GE3 | Nuovo e originale |