SIHP15N6 stock, SIHP15N6, SIHP15N60E-E3


PartNumber	SIHP15N60E-E3	SIHP15N60E-GE3	SIHP15N65E-GE3
Description	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 650V Vds 30V Vgs TO-220AB
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220AB-3	TO-220AB-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V	650 V
Id Continuous Drain Current	15 A	15 A	15 A
Rds On Drain Source Resistance	280 mOhms	280 mOhms	280 mOhms
Vgs th Gate Source Threshold Voltage	4 V	4 V	4 V
Vgs Gate Source Voltage	30 V	30 V	30 V
Qg Gate Charge	39 nC	39 nC	48 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	180 W	180 W	34 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Series	E	E	E
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Fall Time	22 ns	22 ns	25 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	26 ns	26 ns	24 ns
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	41 ns	41 ns	48 ns
Typical Turn On Delay Time	16 ns	16 ns	18 ns
Unit Weight	0.211644 oz	0.211644 oz	0.211644 oz
Height	-	-	15.49 mm
Length	-	-	10.41 mm
Width	-	-	4.7 mm

Search Part Number : "SIHP15N6", Match & Start with "SIHP15N6" - Total : 9

Produttore	Parte #	Descrizione
Vishay / Siliconix	SIHP15N60E-E3	MOSFET 600V Vds 30V Vgs TO-220AB
	SIHP15N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
	SIHP15N65E-GE3	MOSFET 650V Vds 30V Vgs TO-220AB
Vishay	SIHP15N60E-GE3	IGBT Transistors MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS
	SIHP15N65E-GE3	RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
	SIHP15N60E-E3	MOSFET N-CH 600V 15A TO220AB
	SIHP15N60E	Nuovo e originale
	SIHP15N60EGE3	Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	SIHP15N65EGE3	Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SIHP15N6