 |  |  | |
| PartNumber | SIA436DJ-T1-GE3 | SIA436DJ-T4-GE3 | SIA436DJT1GE3 |
| Description | MOSFET 8V Vds 5V Vgs PowerPAK SC-70 | MOSFET 8V Vds 5V Vgs PowerPAK SC-70 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-70-6 | SC-70-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 8 V | 8 V | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 9.4 mOhms | 9.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | 0.35 V | - |
| Vgs Gate Source Voltage | 4.5 V | 5 V | - |
| Qg Gate Charge | 15 nC | 25.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 19 W | 19 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Series | SIA | SIA | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 70 S | 70 S | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | SIA436DJ-GE3 | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA436DJ-T1-GE3 | MOSFET 8V Vds 5V Vgs PowerPAK SC-70 | |
| SIA436DJ-T4-GE3 | MOSFET 8V Vds 5V Vgs PowerPAK SC-70 | ||
Vishay |
SIA436DJ-T1-GE3 | MOSFET N-CH 8V 12A SC70-6L | |
| SIA436DJT1GE3 | Nuovo e originale |