SI7913

SI7913DN-T1-E3 vs SI7913 vs SI7913DN-T1

 
PartNumberSI7913DN-T1-E3SI7913SI7913DN-T1
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK 1212-8
ManufacturerVishayVishay SiliconixVishay Siliconix
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSE--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8--
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current7.4 A--
Rds On Drain Source Resistance37 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.8 W--
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFET--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
Height1.04 mm--
Length3.3 mm--
SeriesSI7TrenchFETRTrenchFETR
Transistor Type2 P-Channel2 P-Channel2 P-Channel
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min20 S--
Fall Time150 ns70 ns70 ns
Product TypeMOSFET--
Rise Time70 ns70 ns70 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns72 ns72 ns
Typical Turn On Delay Time20 ns20 ns20 ns
Part # AliasesSI7913DN-E3--
Part Aliases-SI7913DN-E3SI7913DN-E3
Package Case-PowerPAKR 1212-8 DualPowerPAKR 1212-8 Dual
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-PowerPAKR 1212-8 DualPowerPAKR 1212-8 Dual
FET Type-2 P-Channel (Dual)2 P-Channel (Dual)
Power Max-1.3W1.3W
Drain to Source Voltage Vdss-20V20V
Input Capacitance Ciss Vds---
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-5A5A
Rds On Max Id Vgs-37 mOhm @ 7.4A, 4.5V37 mOhm @ 7.4A, 4.5V
Vgs th Max Id-1V @ 250μA1V @ 250μA
Gate Charge Qg Vgs-24nC @ 4.5V24nC @ 4.5V
Pd Power Dissipation-1.3 W1.3 W
Vgs Gate Source Voltage-8 V8 V
Id Continuous Drain Current-5 A5 A
Vds Drain Source Breakdown Voltage-- 20 V- 20 V
Rds On Drain Source Resistance-37 mOhms37 mOhms
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7913DN-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
SI7913DN-T1-E3 MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
SI7913DN-T1-GE3-CUT TAPE Nuovo e originale
SI7913 Nuovo e originale
SI7913DN-T1 Nuovo e originale
SI7913DN-T1-G3E Nuovo e originale
Vishay
Vishay
SI7913DN-T1-E3 MOSFET 2P-CH 20V 5A 1212-8
SI7913DN-T1-GE3 MOSFET 2P-CH 20V 5A PPAK 1212-8
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